Test Chip Programme

a) RBIAS_IV: Resistance test on the set of bias resistors

For each of the 6 bias resistors (or the 3 available for wire-bonding), current should be measured as a function of applied voltage from 0 to 5 V in steps of 0.5 V.

For each set of resistors, the following test-specific properties should be recorded:

  • SOURCE_METER (Required): Identifier/model of source meter used for measurements (string)
  • ALGORITHM: (Not required) Extraction algorithm name and version (string)

From the measurements, the following (float) extracted parameters should be recorded:

  • R1 (Required), R2, R3, R4, R5, R6 (Not required) [Ω] (it will not be “required” to upload 6 values, some of these parameters will be optional)
  • R7 (Ω) (additional)
  • AVERAGE_RBIAS (Ω) (Required) (float)
  • RANGE_RBIAS (Ω) (Required) (float)

Thresholds:

  • AVERAGE_RBIAS = (1.5 ± 0.5) × 106 Ω
  • RANGE_RBIAS = max: 0.5 × 106 Ω
  • R1 = (1.5 ± 0.5) × 106 Ω

b) CCPL_C: Capacitance test of the coupling capacitor

The following test-specific properties should be recorded:

  • LCR_METER: Identifier/model of LCR meter used for measurements (string) (Required)
  • SIGNAL_AMPLITUDE: LCR source voltage/amplitude (float) (V) (Required)
  • SIGNAL_FREQUENCY: LCR frequency (float) (Hz) (Required)
  • CIRCUIT_MODEL: LCR circuit model – ‘CR-Series’/‘CR-Parallel’ (string) (Required)
  • ALGORITHM: Extraction algorithm name and version (string) (Not required)

From these, the following (float) extracted parameter should be recorded:

  • CCOUPL [pF/cm]

Thresholds:

  • CCOUPL ≥ 20 pF/cm *

c) CCPL_IV10: Current/Voltage test of the coupling capacitor up to 10 V

Current should be measured as a function of applied voltage across the capacitor from 0 V to 10 V in 0.5 V steps using an SMU. If the current exceeds 10 nA, the next test (CCPL_IV100) is not needed (An “error” value of 9.99 × 1099 A should be assigned to the current at 100 V in the next test).

d) CCPL_IV100: Current/Voltage test of the coupling capacitor up to 100 V

Providing the device passes the first IV test, this should be repeated from 0 to 100 V in 5 V steps. The following test-specific properties should be recorded:

  • SOURCE_METER: (Required) Identifier/model of SMU used for measurements (string)
  • RSERIES: (Required) Series resistance used in the setup for the test (Ohm) (float)
  • ALGORITHM: Extraction algorithm name and version (string) (Not required)

From the current values the following (float) extracted parameter should be recorded:

  • ICCPL_100V: (Required) Current at the coupling capacitor at 100 V (A) (float)
    • If the value is 1 × 107 A (10 nA = current compliance value) it indicates that the current reached compliance before 100 V, therefore the capacitor is defective.
    • If the value is 9.99 × 109 it indicates that the current exceeded 10 nA before 10 V, therefore the capacitor is defective.

Thresholds:

  • Current up to 100 V < 10-8 A

e) CFLD_CV: Capacitance/Voltage test of the field-oxide capacitor

The capacitance should be measured as a function of applied bias voltage in steps of 0.1 V. The following test-specific properties should be recorded:

  • LCR_METER: Identifier/model of LCR meter used for measurements (string) (Required)
  • SIGNAL_AMPLITUDE: LCR source voltage/amplitude (float) (V) (Required)
  • SIGNAL_FREQUENCY: LCR frequency (float) (Hz) (Required)
  • CIRCUIT_MODEL: LCR circuit model – ‘CR-Series’/‘CR-Parallel’ (string) (Required)
  • ALGORITHM: Extraction algorithm name and version (string) (Not required)

The following (Array) parameters should be recorded:

  • VOLTAGE : (Required) Array of test voltages applied (V) (float)
  • CAPACITANCE: (Required) Array of capacitance values measured (pF) (float)

From these, the following 3 (float)extracted parameters should be recorded:

  • C_OX: (Required) Maximum capacitance of the oxide (pF) (float)
  • T_OX: (Required) Oxide thickness (µm) (float)
  • VFB: (Required) Flat-band voltage (V) (float)

In addition:

  • We propose a test-bitmap image of the CV plot is uploaded to the DB as an attatchment to allow extracted values of Cox and VFB to be checked by eye if any discrepancies are noted.

Thresholds:

  • To be defined

f) CBR-I_IV: Test of the Implant Cross-Bridge Resistor

The following test-specific properties should be recorded:

  • SOURCE_METER: (Required) Identifier/model of SMU used for measurements (string)
  • ALGORITHM: Extraction algorithm name and version (string) (Not required)

From the measured raw parameters, the following 2 (float) extracted parameters should be recorded:

  • R-I: (Required) Resistance of the implant per unit length (Ω/cm) (float)
  • WEFF-I: (Required) Effective implant line width measured (µm) (float)

Thresholds:

  • R-I < 5×104 Ω/cm
  • WEFF-I = 16 ± 3 µm

g) CBR-M_IV: Test of the Metal Cross-Bridge Resistor

The following test-specific properties should be recorded:

  • SOURCE_METER: (Required) Identifier/model of SMU used for measurements (string)
  • ALGORITHM: Extraction algorithm name and version (string) (Not required)

From the measured raw parameters, the following 2 (float) extracted parameters should be recorded:

  • R-M: (Required) Resistance of the metal per unit length (Ω/cm) (float)
  • WEFF-M: (Required) Effective metal line width measured (µm) (float)

Thresholds:

  • R-M < 30 Ω/cm
  • WEFF-M = 22 ± 3 µm
  • WEFF-M > WEFF-I + 4 µm

h) INT_LOW_IV, INT_MID_IV, INT_UP_IV: Interstrip resistance test on the (LOWER, MIDDLE, UPPER) Interdigitated structure

There are 3 interdigitated structures on each test chip of 7 possible ‘flavours’ (LS, SS, R1, R2, R3, R4, R5). Each TC has one SS structure while the flavour of the other two depends on the chip’s type. A power supply should be used to bias the bulk of the test chip in full depletion. Current between neighbouring strips should be measured as a function of applied voltage from 0 V to 10 V in 0.1 V steps with an SMU.

The following test-specific properties should be recorded:

  • SOURCE_METER: (Required) Identifier/model of SMU used for measurements (string)
  • BIAS_VOLTAGE: (Required) Bias voltage applied (float) [V]
  • SOURCE_BIAS:(Required) Identifier/model of source used for biasing (string)
  • ALGORITHM: (Not required) Extraction algorithm name and version (string)

The following (Array) parameters should be recorded:

  • VOLTAGE : (Required) Array of test voltages applied (V) (float)
  • CURRENT: (Required) Array of current values measured (A) (float)

From these, the following (float) extracted parameters should be recorded:

  • RINT_LOW, RINT_MID, RINT_UP: (Required) Interstrip resistance of the (LOWER, MIDDLE, UPPER) interdigitated structure [Ω]

Thresholds:

  • Rint > 10 x Rbias (Minimum set to: 15000000 Ω)

i) INT_LOW_C, INT_MID_C, INT_UP_C: Interstrip capacitance test on the (LOWER, MIDDLE, UPPER) Interdigitated structure

A power supply should be used to bias the bulk of the test chip in full depletion. The following test specific properties should be recorded:

  • LCR_METER: Identifier/model of LCR meter used for measurements (string) (Required)
  • SIGNAL_AMPLITUDE: LCR source voltage/amplitude (float) (V) (Required)
  • SIGNAL_FREQUENCY: LCR frequency (float) (Hz) (Required)
  • CIRCUIT_MODEL: LCR circuit model – ‘CR-Series’/‘CR-Parallel’ (string) (Required)
  • BIAS_VOLTAGE: (Required) Bias voltage applied (float) [V]
  • SOURCE_BIAS:(Required) Identifier/model of source used for biasing (string)
  • ALGORITHM: Extraction algorithm name and version (string) (Not required)

From the measured capacitance the following (float) extracted parametersshould be recorded:

  • CINTLOW, CINT_MID, CINT_UP: (Required) Interstrip capacitance per unit length of the (LOWER, MIDDLE, UPPER) interdigitated structure [pF/cm]

Thresholds: * Cint < 1 pF/cm
*

j) PTP_IV: Test of the Punch-Through Protection (PTP) structures

The PTP structure consists of 10 channel “ends”, of which the PTP effective resistance can be extracted for 8 channels (all the strips with neighbours). Using a power supply to bias the bulk of the test chip in full depletion, current between neighbouring strips should be measured as a function of applied voltage from 0 V to 40 V in 0.2 V steps with an SMU.

The following test-specific properties of the instruments should be recorded:

  • SOURCE_METER: (Required) Identifier/model of SMU used for measurements (string)
  • BIAS_VOLTAGE: (Required) Bias voltage applied (float) [V]
  • SOURCE_BIAS:(Required) Identifier/model of source used for biasing (string)
  • ALGORITHM: (Not required) Extraction algorithm name and version (string)

The following (float) derived parameters should be recorded:

  • VTEST : (Required) Test voltage applied to the PTPs [V]
  • RPT: (Required) Array of effective resistance of the PTPs measured (array 8 columns maximum) (Ω) (it is not “required” to upload 8 measurements)

The following (float) extracted parameters should be recorded:

  • VPT1 (Required), Punch-through voltage 1 [V], VPT2 (Not required), VPT3 (Not required), VPT4 (Not required), VPT5 (Not required), VPT6 (Not required), VPT7 (Not required), VPT8 (Not required) (V) (it is not “required” to upload 8 values)
  • AVERAGE_VPT (V) (Required): Mean value of the PTP voltages obtained (float)
  • RANGE_VPT (V) (Required): Range (max-min) of the PTP voltages obtained (float)

Thresholds:

  • To be defined

k) CFLD-P_CV: Capacitance/Voltage test of the field-oxide capacitor with P-stop

The capacitance should be measured as a function of applied bias voltage in steps of 0.1 V. The following test-specific properties should be recorded:

  • LCR_METER: Identifier/model of LCR meter used for measurements (string) (Required)
  • SIGNAL_AMPLITUDE: LCR source voltage/amplitude (float) (V) (Required)
  • SIGNAL_FREQUENCY: LCR frequency (float) (Hz) (Required)
  • CIRCUIT_MODEL: LCR circuit model – ‘CR-Series’/‘CR-Parallel’ (string) (Required)
  • ALGORITHM: Extraction algorithm name and version (string) (Not required)

The following (Array) parameters should be recorded:

  • VOLTAGE: (Required) Array of test voltages applied (V) (float)
  • CAPACITANCE: (Required) Array of capacitance values measured (pF)
  • (float) From these, the following 3 (float) extracted parameters should be recorded:
  • C_OX-P: (Required) Maximum capacitance of the oxide with P-stop (pF) (float)
  • T_OX-P: (Required) Oxide thickness with P-stop (µm) (float)
  • SREF: (Required) Curve slope at VREF (pF/V) (float)
  • VT: (Required) Threshold voltage of the capacitance change (V) (float)

In addition:

  • We propose a bitmap image of the CV plot is uploaded to the DB as an attachment to allow a direct check of the curves by eye.

Thresholds: * To be defined